PART |
Description |
Maker |
42S16800A IS42S16800A IS42S16800A-6T IS42S16800A-7 |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution Inc
|
IS42S16800A1-7TL |
8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc.
|
IS42S16160B IS42S83200B IS42S16160B-7BI IS42S16160 |
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Integrated Silicon Solution, Inc.
|
M27C1024-10XF7 M27C1024-12XF7 M27C1024-15XF7 M27C1 |
1-Mbit (64Kb x16) UV EPROM, 100ns 1-Mbit (64Kb x16) UV EPROM, 120ns 1-Mbit (64Kb x16) UV EPROM, 150ns 1-Mbit (64Kb x16) UV EPROM, 200ns 1-Mbit (64Kb x16) UV EPROM, 35ns 1-Mbit (64Kb x16) UV EPROM, 45ns 1-Mbit (64Kb x16) UV EPROM, 55ns 1-Mbit (64Kb x16) UV EPROM, 70ns 1-Mbit (64Kb x16) UV EPROM, 80ns 1-Mbit (64Kb x16) UV EPROM, 90ns 1-Mbit (64Kb x16) OTP EPROM, 120ns 1-Mbit (64Kb x16) OTP EPROM, 70ns 1-Mbit (64Kb x16) OTP EPROM, 90ns 1-Mbit (64Kb x16) OTP EPROM, 55ns 1-Mbit (64Kb x16) OTP EPROM, 45ns 1-Mbit (64Kb x16) OTP EPROM, 35ns 1-Mbit (64Kb x16) OTP EPROM, 150ns 1-Mbit (64Kb x16) OTP EPROM, 100ns
|
SGS Thomson Microelectronics
|
M39P0R9070E0ZADF M39P0R9070E0 M39P0R9070E0ZAD M39P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
M69KB128AA70AW8 M69KB128AA70CW8 M69KB128AA70DW8 M6 |
128 Mbit (8Mb x16) 1.8V Supply, Burst PSRAM
|
STMicroelectronics
|
M36P0R9070E0ZACF M36P0R9070E0 M36P0R9070E0ZAC M36P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package 512兆位(x16插槽,多银行,多层次,多突发28兆位闪存(突发)移动存储芯片.8V电源,多芯片封装
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
M36W0R6030T0ZAQ M36W0R6030B0ZAQ M36W0R6030B0 M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
http:// STMicroelectronics
|
M30L0R7000B0ZAQE M30L0R7000B0ZAQF M30L0R7000B0ZAQT |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
|
ST Microelectronics
|
M30LW128D M30LW128D110N1T M30LW128D110N6T M30LW128 |
128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
|
ST Microelectronics 意法半导
|
M58LR128FB85ZB6T |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
ST Microelectronics
|